The ULN2003APG is a high-current, 7-channel NPN Darlington transistor array from Toshiba. It features a collector-emitter saturation voltage of 1.6V and a maximum collector current of 500mA. The device is rated for operation at temperatures between -40°C and 85°C. It is available in a PDIP package with through-hole mounting. The ULN2003APG is not radiation hardened.
PackagePDIP
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba ULN2003APG(O,N,M) technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Elements | 7 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2003APG(O,N,M) Datasheet
Download the complete datasheet for Toshiba ULN2003APG(O,N,M) to view detailed technical specifications.
No datasheet is available for this part.