NPN Darlington transistor array featuring seven elements, designed for through-hole mounting in a 16-pin PDIP package. This component offers a maximum collector-emitter voltage of 50V and a continuous DC collector current of 0.5A per element. It supports a maximum power dissipation of 1470mW and exhibits a minimum DC current gain of 1000 at 350mA/2V. Operating temperature range is from -40°C to 85°C.
PackagePDIP
MountingThrough Hole
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Technical Specifications
Toshiba ULN2003APG(OSCHZ2B technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
DIP
Package/Case
PDIP
Package Description
Plastic Dual In Line Package
Lead Shape
Through Hole
Pin Count
16
PCB
16
Package Length (mm)
19.75(Max)
Package Width (mm)
6.4
Package Height (mm)
3.5
Seated Plane Height (mm)
4.15
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
MS-001BB
Type
NPN
Configuration
Array 7
Number of Elements per Chip
7
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
0.5A
Maximum Power Dissipation
1470mW
Maximum Collector-Emitter Saturation Voltage
1.1@100mA|1.3@200mA|1.6@350mAV
Minimum DC Current Gain
1000@350mA@2V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba ULN2003APG(OSCHZ2B Datasheet
Download the complete datasheet for Toshiba ULN2003APG(OSCHZ2B to view detailed technical specifications.
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