Automotive-qualified 650 V normally-off gallium nitride FET in a through-hole TO-247-3 package with common-source configuration. The device supports 35.2 A continuous drain current at 25°C, 150 A pulsed drain current, and 125 W maximum power dissipation. It features 49 mΩ typical on-resistance at 25°C, 28 nC typical total gate charge, and 136 nC typical reverse recovery charge for efficient high-speed power switching. Operating junction temperature ranges from -55°C to 150°C, and the device is RoHS compliant and halogen-free.
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Transphorm TPH3205WSBQA technical specifications.
| Transistor Type | N-Channel |
| Technology | GaN FET |
| Drain to Source Voltage | 650V |
| Transient Drain to Source Voltage | 800V |
| Continuous Drain Current @ 25°C | 35.2A |
| Continuous Drain Current @ 100°C | 22.3A |
| Pulsed Drain Current | 150A |
| On Resistance RDS(on) | 49 typ, 60 maxmΩ |
| Gate Threshold Voltage | 1.6 to 2.6V |
| Gate Source Voltage | ±18V |
| Input Capacitance Ciss | 2200pF |
| Total Gate Charge Qg | 28 typ, 42 maxnC |
| Reverse Recovery Charge Qrr | 136 typnC |
| Power Dissipation | 125W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1°C/W |
| Qualification | AEC-Q101 |
| RoHS | Compliant |
| Halogen Free | Yes |
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