This device is a preliminary N-channel enhancement-mode power MOSFET rated for 50 V drain-source voltage and 100 A continuous drain current. It is offered in a TO-220 package and is intended for low-resistance, high-speed switching applications. Typical drain-source on-resistance is 7 mΩ at 10 V gate drive and 10 mΩ at 4.5 V gate drive. The device supports 400 A pulsed drain current, 875 mJ single-pulse avalanche energy, and junction temperatures up to 150 °C.
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Unisonic Technologies UTT100N05 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 50V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Pulsed Drain Current | 400A |
| Power Dissipation | 83W |
| Avalanche Energy | 875mJ |
| Junction Temperature | 150°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Drain-Source On-Resistance @ VGS=10V | 7mΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 10mΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 12900pF |
| Output Capacitance | 1060pF |
| Reverse Transfer Capacitance | 700pF |
| Total Gate Charge | 500nC |
| Body Diode Forward Voltage | 1.0 to 1.5V |
