This device is an N-channel power trench MOSFET rated for 60 V drain-source voltage and 150 A continuous drain current. It is intended for synchronous rectification and DC-DC converter applications where low on-state resistance and fast switching are important. The datasheet specifies 3.2 mΩ typical and 4.0 mΩ maximum drain-source on-resistance at 10 V gate drive and 75 A drain current. It is housed in a TO-220 package and is identified as RoHS compliant.
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Unisonic Technologies UTT150N06H technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 150A |
| Pulsed Drain Current | 600A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 3.2 typ, 4.0 maxmΩ |
| Gate Threshold Voltage | 2.5 min, 3.5 typ, 4.5 maxV |
| Power Dissipation | 231W |
| Single Pulsed Avalanche Energy | 872mJ |
| Junction Temperature | +150 max°C |
| Storage Temperature | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 0.94°C/W |
| Input Capacitance | 6190 typ, 8235 maxpF |
| Total Gate Charge | 102 typ, 133 maxnC |
| Rise Time | 40 typ, 90 maxns |
| Body Diode Reverse Recovery Time | 41ns |
| Body Diode Reverse Recovery Charge | 47µC |
| RoHS | Compliant |
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