This device is an N-channel enhancement-mode power MOSFET rated for 50 V drain-source voltage and 80 A continuous drain current. It is designed for low on-state resistance, high switching speed, and low gate charge in switching regulators, DC linear mode control, automotive systems, and solenoid or motor control. The device is specified with up to 7 mΩ on-state resistance at 10 V gate drive and uses a TO-220 package. Maximum junction temperature is 150 °C, and the datasheet lists 312 W power dissipation with 0.4 °C/W junction-to-case thermal resistance.
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Unisonic Technologies UTT80N05 technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 50V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| Single Pulsed Avalanche Energy | 860mJ |
| Power Dissipation | 312W |
| On-State Resistance | 7 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Junction Temperature | 150 max°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.4°C/W |
| Input Capacitance | 3565pF |
| Output Capacitance | 1310pF |
| Reverse Transfer Capacitance | 395pF |
| Total Gate Charge | 269 maxnC |
| Turn-On Delay Time | 12ns |
| Rise Time | 34ns |
| Turn-Off Delay Time | 37ns |
| Fall Time | 23ns |
| Body Diode Forward Voltage | 1.25 maxV |
Download the complete datasheet for Unisonic Technologies UTT80N05 to view detailed technical specifications.
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