This N-channel power MOSFET uses SGT technology and is packaged in PDFN5060X. It is rated for 60 V drain-source voltage, 190 A drain current, and 139 W power dissipation. The device has a 1.3 V to 2.4 V threshold voltage range and supports a ±20 V gate-source rating. Typical on-resistance is 2.4 mΩ at 10 V gate drive and 3.5 mΩ at 4.5 V, with 5865 pF input capacitance, 2595 pF output capacitance, 35 pF reverse transfer capacitance, and total gate charge of 82 nC at 10 V.
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Vergiga VS6602GP technical specifications.
| Channel Type | N-Channel |
| Technology | SGT |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Threshold Voltage | 1.3 to 2.4V |
| Continuous Drain Current | 190A |
| Power Dissipation | 139W |
| RDS(on) Typ @ VGS=10V | 2.4mΩ |
| RDS(on) Typ @ VGS=4.5V | 3.5mΩ |
| Input Capacitance | 5865pF |
| Output Capacitance | 2595pF |
| Reverse Transfer Capacitance | 35pF |
| Total Gate Charge @ VGS=10V | 82nC |
| Total Gate Charge @ VGS=4.5V | 40nC |
Download the complete datasheet for Vergiga VS6602GP to view detailed technical specifications.
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