This device is an N-channel MOSFET built with SGT technology and supplied in a PDFN5x6 package. It is rated for 60 V drain-to-source voltage, ±20 V gate-to-source voltage, 120 A drain current, and 69 W power dissipation. Typical on-resistance is 3.0 mΩ at 10 V gate drive and 4.8 mΩ at 4.5 V. Typical capacitances are 3450 pF input, 1570 pF output, and 35 pF reverse transfer. Total gate charge is 50 nC at 10 V and 24 nC at 4.5 V, with a threshold voltage range of 1.3 V to 2.5 V.
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Vergiga VS6604GP technical specifications.
| Transistor Type | NMOS |
| Technology | SGT |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Threshold Voltage Min | 1.30V |
| Threshold Voltage Max | 2.50V |
| Drain Current | 120A |
| Power Dissipation | 69W |
| RDS(on) Typ @ VGS=10V | 3.00mΩ |
| RDS(on) Typ @ VGS=4.5V | 4.80mΩ |
| Input Capacitance | 3450pF |
| Output Capacitance | 1570pF |
| Reverse Transfer Capacitance | 35pF |
| Total Gate Charge @ 10V | 50nC |
| Total Gate Charge @ 4.5V | 24nC |
| Package | PDFN5x6 |
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