This enhancement-mode N-channel power MOSFET uses VitoMOS II technology in a PDFN5x6 package. It is rated for 60 V drain-source breakdown and 75 A continuous drain current at TC = 25 °C, with typical on-resistance of 5 mΩ at VGS = 10 V and 8 mΩ at VGS = 4.5 V. Typical dynamic parameters include 30 nC total gate charge at 10 V and 1950 pF input capacitance at VDS = 30 V. The device is specified as RoHS compliant with Pb-free lead plating and is supplied in 3000-piece reels.
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Vergiga VS6606GP technical specifications.
| Drain-Source Breakdown Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ TC=25°C | 75A |
| Continuous Drain Current @ TC=100°C | 48A |
| Continuous Drain Current @ TA=25°C | 23A |
| Continuous Drain Current @ TA=70°C | 18A |
| Pulse Drain Current | 300A |
| Drain-Source On-State Resistance @ VGS=10V, ID=40A | 5 typ / 6.5 maxmΩ |
| Drain-Source On-State Resistance @ VGS=4.5V, ID=20A | 8 typ / 11 maxmΩ |
| Gate Threshold Voltage | 1.3 min / 1.8 typ / 2.5 maxV |
| Input Capacitance | 1950 typpF |
| Output Capacitance | 840 typpF |
| Reverse Transfer Capacitance | 35 typpF |
| Total Gate Charge @ VGS=10V | 30 typnC |
| Total Gate Charge @ VGS=4.5V | 14 typnC |
| Avalanche Energy, Single Pulse | 25mJ |
| Maximum Power Dissipation @ TC=25°C | 45W |
| Junction-to-Case Thermal Resistance | 2.8 typ°C/W |
| RoHS | Compliant |
| Lead-free | Pb-free lead plating |
