N-channel power MOSFET supports an 85 V drain-source breakdown rating and 124 A drain current. The device uses SGT technology in a TO-220AB package with 150 W power dissipation. Typical on-resistance is 4.90 mΩ at 10 V gate drive, and total gate charge is 57 nC at 10 V.
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| Transistor Type | N-channel MOSFET |
| Drain-Source Breakdown Voltage | 85.00V |
| Gate Threshold Voltage Min | 2.50V |
| Gate Threshold Voltage Max | 3.50V |
| Continuous Drain Current | 124.00A |
| Power Dissipation | 150.00W |
| RDS(on) Typ at 10 V | 4.90mΩ |
| Input Capacitance | 3695.00 |
| Output Capacitance | 1225.00 |
| Reverse Transfer Capacitance | 35.00 |
| Total Gate Charge at 10 V | 57.00nC |
| Package | TO-220AB |
| Technology | SGT |
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