The FQD5P10TM is a surface mount power MOSFET with a maximum drain current of 7.5A and a maximum drain to source voltage of 30V. It has a maximum power dissipation of 3.1W and a maximum gate to source voltage of 30V. The device is packaged in a lead free SOIC package and is compliant with Reach SVHC regulations. It has a maximum drain to source resistance of 1.05 ohms and a maximum Rds on of 35 milliohms.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | -3.6A |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.04nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
