The FQP2N60C is a surface mount power MOSFET from Vishay with a maximum continuous drain current of 2.17A and a drain to source breakdown voltage of 600V. It features a maximum power dissipation of 12.5W and a maximum on-resistance of 1.2 ohms. The device is packaged in a lead-free TO-220 package and is compliant with Reach SVHC regulations. The FQP2N60C is suitable for use in a variety of high-power applications, including power supplies and motor control circuits.
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Vishay FQP2N60C technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 2.17A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 12.5W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Power Dissipation | 54W |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Yes |
| Series | TrenchFET® |
| DC Rated Voltage | 600V |
| RoHS | Not Compliant |
No datasheet is available for this part.
