The FQP2N90 is a surface-mount N-channel MOSFET with a maximum drain current of 7.7A and a drain-to-source breakdown voltage of 900V. It has a maximum power dissipation of 2.5W and is packaged in a TO-252-3 lead-free package. The device is compliant with RoHS and has a maximum input capacitance of 490pF. It can handle a maximum drain-to-source voltage of 100V and a gate-to-source voltage of 30V.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Current Rating | 2.2A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 7.2R |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 85W |
| Rds On Max | 270mR |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 900V |
| RoHS | Not Compliant |
