The FQP4N80 is a surface mount N-Channel MOSFET with a maximum drain to source breakdown voltage of 800V and a continuous drain current of 1.7A. It features a maximum power dissipation of 2.5W and a maximum on-resistance of 3.6 ohms. The device is packaged in a TO-252-3 package and is lead free. The FQP4N80 is suitable for a variety of applications including power supplies and motor control circuits.
PackageTO-252-3
Current Rating3.9A
MountingSurface Mount
Power130W
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Technical Specifications
Vishay FQP4N80 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Rds On Max | 3.6R |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQP4N80 Datasheet
Download the complete datasheet for Vishay FQP4N80 to view detailed technical specifications.
No datasheet is available for this part.