The FQP4P40 is a TrenchFET N-Channel MOSFET from Vishay with a maximum drain to source voltage of 100V and a maximum drain current of 6.8A. It features a drain to source resistance of 3.1 ohms and a maximum power dissipation of 6W. The device is packaged in a surface mount SOIC package and is lead free. It has an input capacitance of 600 picofarads and a maximum Rds on resistance of 63 milliohms. The FQP4P40 is rated for operation over a temperature range of -55 to 150 degrees Celsius.
PackageSOIC
Current Rating-3.5A
MountingSurface Mount
Power85W
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Technical Specifications
Vishay FQP4P40 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.8A |
| Current Rating | -3.5A |
| Drain to Source Resistance | 3.1R |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 85W |
| Rds On Max | 63mR |
| Series | TrenchFET® |
| DC Rated Voltage | -400V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay FQP4P40 Datasheet
Download the complete datasheet for Vishay FQP4P40 to view detailed technical specifications.
No datasheet is available for this part.