The HUF75631S3ST is a 100V surface mount power MOSFET from Vishay with a maximum current rating of 33A and a maximum power dissipation of 120W. It features a trench gate structure and a maximum on-resistance of 12.5mR. The device is lead-free and available in a SOIC package, packaged on a tape and reel. Operating temperature range is not specified. The device is suitable for a variety of applications including power supplies and motor control.
Vishay HUF75631S3ST technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.31W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 120W |
| Rds On Max | 12.5mR |
| Series | TrenchFET® |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
No datasheet is available for this part.
