N-channel MOSFET transistor featuring a 200V drain-source breakdown voltage and a continuous drain current of 5.2A. This through-hole component offers a maximum power dissipation of 50W and an 800mΩ drain-source on-resistance. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220AB package. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.
PackageTO-220AB
Voltage200V
Current52A
Current Rating5.2A
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Technical Specifications
Vishay IRF620PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.2A |
| Current | 52A |
| Current Rating | 5.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 260pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.2ns |
| Voltage | 200V |
| DC Rated Voltage | 250V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF620PBF Datasheet
Download the complete datasheet for Vishay IRF620PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.