N-channel MOSFET transistor featuring a 200V drain-source breakdown voltage and a continuous drain current of 5.2A. This through-hole component offers a maximum power dissipation of 50W and an 800mΩ drain-source on-resistance. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220AB package. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.
PackageTO-220AB
Voltage200V
Current52A
Current Rating5.2A
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Technical Specifications
Vishay IRF620PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5.2A
Current
52A
Current Rating
5.2A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
260pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
Voltage
200V
DC Rated Voltage
250V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF620PBF Datasheet
Download the complete datasheet for Vishay IRF620PBF to view detailed technical specifications.
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