N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. Offers 0.85 ohm maximum drain-source on-resistance. Operates with a 30V gate-source voltage and 4V threshold voltage. Includes 12ns turn-on delay and 19ns fall time. Maximum power dissipation is 125W.
PackageTO-220AB
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF840LCPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
850mR
Dual Supply Voltage
500V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
27ns
Turn-On Delay Time
12ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF840LCPBF Datasheet
Download the complete datasheet for Vishay IRF840LCPBF to view detailed technical specifications.
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