
N-Channel Power MOSFET, TO-220AB package, featuring 500V drain-source breakdown voltage and 8A continuous drain current. Offers 0.85 ohm maximum drain-source on-resistance. Operates with a 30V gate-source voltage and 4V threshold voltage. Includes 12ns turn-on delay and 19ns fall time. Maximum power dissipation is 125W.
Vishay IRF840LCPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Dual Supply Voltage | 500V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRF840LCPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
