P-channel power MOSFET, TO-220AB package, featuring a continuous drain current of 1.8A and a drain-source breakdown voltage of -200V. Offers a low drain-source on-resistance of 3 ohms. Operates with a gate-source voltage up to 20V and a nominal threshold voltage of -4V. Includes fast switching times with turn-on and fall times of 8ns, and a turn-off delay of 10ns. Maximum power dissipation is 20W, with a maximum operating temperature of 150°C.
PackageTO-220AB
Voltage200V
Current Rating-1.8A
MountingThrough Hole
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Technical Specifications
Vishay IRF9610PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
1.8A
Current Rating
-1.8A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
-200V
Drain-source On Resistance-Max
3R
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
170pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
10ns
Turn-On Delay Time
8ns
Voltage
200V
DC Rated Voltage
-200V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRF9610PBF Datasheet
Download the complete datasheet for Vishay IRF9610PBF to view detailed technical specifications.
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