N-Channel Power MOSFET, 500V Drain-Source Voltage, 17A Continuous Drain Current, and 290mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 220W, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 5V threshold voltage and a 30V gate-to-source voltage rating. This component is RoHS compliant.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB18N50KPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 290mR |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.01mm |
| Input Capacitance | 2.83nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 220W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 500V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFB18N50KPBF Datasheet
Download the complete datasheet for Vishay IRFB18N50KPBF to view detailed technical specifications.
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