N-Channel Power MOSFET, 500V Drain-Source Voltage, 17A Continuous Drain Current, and 290mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 220W, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 5V threshold voltage and a 30V gate-to-source voltage rating. This component is RoHS compliant.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFB18N50KPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
17A
Current Rating
18A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
290mR
Dual Supply Voltage
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
30V
Height
9.01mm
Input Capacitance
2.83nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
220W
Mount
Through Hole
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
220W
Radiation Hardening
No
Rds On Max
290mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
45ns
Turn-On Delay Time
22ns
DC Rated Voltage
500V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFB18N50KPBF Datasheet
Download the complete datasheet for Vishay IRFB18N50KPBF to view detailed technical specifications.
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