N-Channel Power MOSFET, featuring a 200V drain-source breakdown voltage and 4.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a maximum drain-source on-resistance of 800mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.
PackageTO-220-3
Current Rating4.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI620GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 4.1A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Dual Supply Voltage | 200V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.8mm |
| Input Capacitance | 260pF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFI620GPBF Datasheet
Download the complete datasheet for Vishay IRFI620GPBF to view detailed technical specifications.
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