N-Channel Power MOSFET, featuring a 200V drain-source breakdown voltage and 4.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a maximum drain-source on-resistance of 800mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Key switching characteristics include a 7.2ns turn-on delay and a 13ns fall time.
PackageTO-220-3
Current Rating4.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFI620GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.1A
Current Rating
4.1A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
800mR
Dual Supply Voltage
200V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
260pF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
800mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.2ns
DC Rated Voltage
200V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI620GPBF Datasheet
Download the complete datasheet for Vishay IRFI620GPBF to view detailed technical specifications.
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