P-channel power MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 140mΩ drain-source on-resistance and a maximum power dissipation of 42W. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 20ns turn-on delay and 58ns fall time.
PackageTO-220-3
Current Rating-12A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Vishay IRFI9Z34GPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Current Rating
-12A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
140mR
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
9.8mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
10.63mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Nominal Vgs
-4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
140mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
IRF/SIHGI9ZxxG
Threshold Voltage
-4V
Turn-Off Delay Time
20ns
Turn-On Delay Time
18ns
DC Rated Voltage
-60V
Weight
0.211644oz
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFI9Z34GPBF Datasheet
Download the complete datasheet for Vishay IRFI9Z34GPBF to view detailed technical specifications.
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