The SE50PAGHM3/I is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a dual terminal position and a JEDEC package code of DO-221BC. The diode is constructed from a single silicon element and is designed for use as a general purpose rectifier. It is packaged in a 2-pin R-PDSO-F2 package type.
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Technical Specifications
Vishay SE50PAGHM3/I technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-221BC |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 400 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay SE50PAGHM3/I Datasheet
Download the complete datasheet for Vishay SE50PAGHM3/I to view detailed technical specifications.
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