N-Channel TrenchFET® MOSFET, 20V Vdss, 485mA continuous drain current. Features 700mΩ max drain-source on-resistance and 450mV threshold voltage. Operates with a 6V gate-source voltage and offers 10ns turn-on and 36ns turn-off delay times. Packaged in a compact 1.7mm x 1.2mm x 0.6mm SOT-563-6 surface-mount case, this RoHS compliant component has a max power dissipation of 250mW.
PackageSOT-563-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1024X-T1-GE3 technical specifications.
General
Package/Case
SOT-563-6
Continuous Drain Current (ID)
485mA
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700mR
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
6V
Height
0.6mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
450mV
Turn-Off Delay Time
36ns
Turn-On Delay Time
10ns
Weight
0.000289oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1024X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1024X-T1-GE3 to view detailed technical specifications.
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