The SI1046X-T1-GE3 is a N-CHANNEL TrenchFET MOSFET with a maximum continuous drain current of 606mA and a drain to source breakdown voltage of 20V. It has a drain to source resistance of 420mR and a maximum power dissipation of 250mW. The device is packaged in a SMALL OUTLINE, R-PDSO-F3 package and is suitable for surface mount applications. The operating temperature range is from -55°C to 150°C. The device is RoHS compliant and is part of the TrenchFET series.
Resistance0.42R
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1046X-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 606mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 66pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 420mR |
| Resistance | 0.42R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 76ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1046X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1046X-T1-GE3 to view detailed technical specifications.
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