P-channel MOSFET, 8V drain-source voltage, 860mA continuous drain current, and 280mΩ maximum drain-source on-resistance. Features a 3-pin SC-70 (SOT-323-3) surface-mount package. Operates from -55°C to 150°C with a 290mW maximum power dissipation. RoHS compliant and lead-free.
PackageSOT-323-3
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1305DL-T1-E3 technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 860mA |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1305DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1305DL-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
