P-channel MOSFET with 12V drain-source voltage and 850mA continuous drain current. Features 290mΩ maximum drain-source on-resistance and 290mW power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOT-323-3 for surface mounting, supplied on tape and reel. RoHS compliant and lead-free.
PackageSOT-323-3
Voltage12V
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1307DL-T1-E3 technical specifications.
General
| Package/Case | SOT-323-3 |
| Continuous Drain Current (ID) | 850mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.039inch |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 290mW |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 7.5ns |
| Voltage | 12V |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1307DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1307DL-T1-E3 to view detailed technical specifications.
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