The SI3433DV-T1-E3 is a P-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.6A and a drain to source resistance of 42mR. The device is packaged in a TSOP package and is available in quantities of 3000. However, it is not RoHS compliant.
PackageTSOP
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI3433DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI3433DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3433DV-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.