The SI3443DVT1 is a P-channel MOSFET from Vishay with a continuous drain current of 4A and a drain to source resistance of 65mR. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is packaged in a TSOP package with a height of 1mm, length of 3.05mm, and width of 1.65mm. It has a maximum power dissipation of 1.6W and a turn-on delay time of 15ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SI3443DVT1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Polarity | P-CHANNEL |
| Series | SI3 |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.00127oz |
| Width | 1.65mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SI3443DVT1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
