P-channel MOSFET, 20V drain-source voltage, 5.3A continuous drain current, and 24mΩ maximum drain-source on-resistance. Features a 6-TSOP surface mount package with a 1.1W maximum power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 19ns turn-on delay and 36ns fall time. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3495DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 5V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -750mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -750mV |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3495DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3495DV-T1-E3 to view detailed technical specifications.
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