This device is an N-channel 60 V TrenchFET power MOSFET in an SO-8 package. It is rated for up to 32.1 A continuous drain current at case temperature of 25 °C and has maximum on-resistance of 4.2 mΩ at 10 V gate drive, 5.4 mΩ at 6 V, and 6.9 mΩ at 4.5 V. Typical total gate charge is 18.8 nC at 4.5 V gate drive, and typical input capacitance is 3175 pF. The MOSFET is specified for operation from -55 °C to +150 °C and is intended for DC/DC converters, synchronous rectification, load switching, and inverter applications.
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Vishay Si4062DY technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 32.1A |
| On-Resistance @ VGS = 10 V | 0.0042 maxΩ |
| On-Resistance @ VGS = 6 V | 0.0054 maxΩ |
| On-Resistance @ VGS = 4.5 V | 0.0069 maxΩ |
| Total Gate Charge | 18.8 typnC |
| Gate-Source Threshold Voltage | 1.4 to 2.6V |
| Power Dissipation | 7.8W |
| Operating Junction Temperature Range | -55 to +150°C |
| Input Capacitance | 3175 typpF |
| Output Capacitance | 1265 typpF |
| Reverse Transfer Capacitance | 95 typpF |
| Gate Resistance | 2 typΩ |
| Package | SO-8 |
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