The SI4410DY-E3 is a single-element power MOSFET from Vishay, featuring a continuous drain current of 10A and a gate to source voltage of 20V. It is packaged in a surface mount SOIC N package and has a power dissipation of 2.5W. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
Vishay SI4410DY-E3 technical specifications.
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
