N-channel MOSFET with 40V drain-source breakdown voltage and 3.9A continuous drain current. Features low 40mΩ drain-source on-resistance and 1.1W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC surface-mount case, supplied on tape and reel. Includes fast switching characteristics with 7ns turn-on delay and 11ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4446DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4446DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4446DY-T1-E3 to view detailed technical specifications.
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