N-channel MOSFET with 40V drain-source breakdown voltage and 3.9A continuous drain current. Features low 40mΩ drain-source on-resistance and 1.1W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin SOIC surface-mount case, supplied on tape and reel. Includes fast switching characteristics with 7ns turn-on delay and 11ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI4446DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.9A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
40mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
700pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
1.6V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
40mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
27ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4446DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4446DY-T1-E3 to view detailed technical specifications.
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