N-Channel MOSFET, 100V Drain-Source Voltage, 4.6A Continuous Drain Current, 60mΩ Drain-Source Resistance, and 2.5W Max Power Dissipation. This component features a 13ns Turn-On Delay Time and 25ns Fall Time, operating within a -55°C to 150°C temperature range. Packaged in SO, it is RoHS compliant and supplied on tape and reel.
PackageSO
Voltage100V
Current46A
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4482DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.6A |
| Current | 46A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 13ns |
| Voltage | 100V |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4482DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4482DY-T1-E3 to view detailed technical specifications.
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