VISHAY

SI4670DY-T1-E3

Datasheet

2-Ch N-Ch JFET, 25V, 7A ID, 23mR Rds(on), SOIC

Vishay

SI4670DY-T1-E3

Name: SI4670DY-T1-E3 Vishay
Brand: Vishay
SKU: SI4670DY-T1-E3
Availability: InStock

2-Ch N-Ch JFET, 25V, 7A ID, 23mR Rds(on), SOIC

N-Channel Silicon MOSFET, featuring a 2-element design with a 25V drain-source voltage and 7A continuous drain current. This surface-mount device offers a low 23mΩ drain-to-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. It includes fast switching characteristics with turn-on delay time of 15ns and fall time of 50ns, packaged in an RoHS compliant SOIC case.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

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Pricing & Availability

Distributor	Package Type	Min Qty	0+	Stock	Action
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Technical Specifications

Vishay SI4670DY-T1-E3 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	7A
Drain to Source Resistance	23mR
Drain to Source Voltage (Vdss)	25V
Fall Time	50ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	16V
Height	1.55mm
Input Capacitance	680pF
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.8W
Mount	Surface Mount
Number of Channels	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	23mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	20ns
Turn-On Delay Time	15ns
Weight	0.006596oz
Width	4mm