N-Channel Silicon MOSFET, featuring a 2-element design with a 25V drain-source voltage and 7A continuous drain current. This surface-mount device offers a low 23mΩ drain-to-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. It includes fast switching characteristics with turn-on delay time of 15ns and fall time of 50ns, packaged in an RoHS compliant SOIC case.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4670DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
25V
Fall Time
50ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Height
1.55mm
Input Capacitance
680pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
23mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
15ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4670DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4670DY-T1-E3 to view detailed technical specifications.
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