Quick Jump:
Technical Specifications
Vishay SI4804CDY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 865pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4804CDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4804CDY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
