Dual N-channel MOSFET featuring 30V drain-source voltage and 5.7A continuous drain current. Surface mountable in an 8-SOIC package, this component offers a low 22mΩ drain-to-source resistance. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with turn-on delay of 9ns and fall time of 10ns. Maximum power dissipation is 1.1W, and it is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4834BDY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4834BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4834BDY-T1-E3 to view detailed technical specifications.
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