N-CHANNEL MOSFET featuring 30V drain-to-source breakdown voltage and 12A continuous drain current. Offers low 10.5mR drain-to-source resistance and 2.95W maximum power dissipation. Designed for efficient switching with fast turn-on (13ns) and turn-off (55ns) delay times. Packaged in SO format, this RoHS compliant component operates from -55°C to 150°C.
PackageSO
Current Rating12A
PolarityN-CHANNEL
Power2.95W
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Technical Specifications
Vishay SI4884DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.95W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.95W |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4884DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4884DY-T1-E3 to view detailed technical specifications.
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