The SI5402DC-T3 is a N-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6.7A and a drain to source voltage of 30V. The device also features a drain to source resistance of 35mR and a gate to source voltage of 20V. The SI5402DC-T3 is packaged in tape and reel with a quantity of 10000 units.
Resistance0.035R
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5402DC-T3 technical specifications.
General
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Resistance | 0.035R |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI5402DC-T3 Datasheet
Download the complete datasheet for Vishay SI5402DC-T3 to view detailed technical specifications.
No datasheet is available for this part.