MOSFET P-CH 12V 6A 1206-8
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI5475BDC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5475BDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5475BDC-T1-GE3 to view detailed technical specifications.
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