Dual N-channel and P-channel MOSFET for general-purpose small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 3.9A. Offers a low drain-source on-resistance of 85mR maximum. Packaged in a 1206 surface-mount case with tape and reel packaging. Operates across a wide temperature range from -55°C to 150°C.
Package1206
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5504DC-T1-E3 technical specifications.
General
Package/Case
1206
Continuous Drain Current (ID)
3.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
137mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
165MR
Dual Supply Voltage
30V
Fall Time
11ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI5504DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5504DC-T1-E3 to view detailed technical specifications.
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