Dual N-channel and P-channel MOSFET, 20V drain-source voltage, with a continuous drain current of 3.9A. Features low on-resistance of 52mR (max) and 74mR (typical) at 10Vgs. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 2.1W. Packaged in an SMD/SMT 1206-8 case for surface mounting, this RoHS compliant component offers fast switching with a turn-off delay of 25ns and a fall time of 60ns.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power2.1W
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Technical Specifications
Vishay SI5509DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 60ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 455pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5509DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5509DC-T1-E3 to view detailed technical specifications.
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