N-Channel Silicon Field-Effect Transistor (FET) for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 2.9A. Offers a low drain-source on-resistance of 85mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.1W. Includes two N-channel elements in a compact 1206-8 package.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5902DC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
2.9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
85mR
Fall Time
12ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
12ns
Turn-On Delay Time
7ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5902DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5902DC-T1-E3 to view detailed technical specifications.
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