N-channel MOSFET featuring 30V drain-source breakdown voltage and 6A continuous drain current. Offers low 31mΩ drain-source on-resistance at 10V gate-source voltage, with a maximum power dissipation of 10.4W. Designed for surface mounting in a TSOP package, this RoHS compliant component boasts fast switching speeds with turn-on delay of 10ns and fall time of 50ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power10.4W
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Technical Specifications
Vishay SI5906DU-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 31MR |
| Fall Time | 50ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 10.4W |
| Rds On Max | 31mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5906DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5906DU-T1-GE3 to view detailed technical specifications.
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