N-Channel Power MOSFET featuring 30V drain-source voltage and 6A continuous drain current. This surface-mount device offers a low 30mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 10.4W. With a 2-element configuration and fast switching times (15ns turn-on delay, 15ns fall time), it is ideal for power management applications. The compact POWERPAK CHIPFET-8 package measures 3.08mm x 1.98mm x 0.85mm and is HALOGEN FREE and ROHS COMPLIANT.
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Vishay SI5936DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 320pF |
| Length | 3.08mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10.4W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 15ns |
| Width | 1.98mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5936DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5936DU-T1-GE3 to view detailed technical specifications.
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