N-channel MOSFET transistor for surface mount applications, featuring a 20V drain-to-source voltage and 14A continuous drain current. Offers a low 4.9mΩ drain-to-source resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range with fast switching characteristics, including 10ns turn-on delay and 10ns fall time. Packaged in a compact 3.05mm x 3.05mm x 1.04mm PowerPAK 1212 package, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7108DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 4.9mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.04mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7108DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7108DN-T1-GE3 to view detailed technical specifications.
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