N-Channel Power MOSFET with 8V Drain-Source Voltage and 8.1A Continuous Drain Current. Features 31mΩ maximum Drain-Source On-Resistance and 2.78W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 4-pin package, supplied on tape and reel. Compliant with RoHS standards.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8424DB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
8.1A
Drain to Source Resistance
31mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
31MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
1.95nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.78W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
31mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
110ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8424DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8424DB-T1-E1 to view detailed technical specifications.
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