The SI8425DB-T1-E1 is a P-CHANNEL TrenchFET MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.7W and is RoHS compliant. The device has a drain to source voltage of 20V and a drain to source resistance of 23mR. It is available in a surface mount package and is suitable for use in a variety of applications.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8425DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | -9.3A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 23mR |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 600ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8425DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8425DB-T1-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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