Vishay
SI8435DB-T1-E1
Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, 0.80 MM PITCH, ROHS COMPLIANT, ULTRA SMALL, MICRO FOOT, 4 PIN
Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, 0.80 MM PITCH, ROHS COMPLIANT, ULTRA SMALL, MICRO FOOT, 4 PIN
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8435DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 91ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 41mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8435DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8435DB-T1-E1 to view detailed technical specifications.
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