Vishay
SI8435DB-T1-E1
Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, 0.80 MM PITCH, ROHS COMPLIANT, ULTRA SMALL, MICRO FOOT, 4 PIN
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8435DB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
10A
Drain to Source Resistance
41mR
Drain to Source Voltage (Vdss)
20V
Fall Time
91ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
1.6nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
41mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
230ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8435DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8435DB-T1-E1 to view detailed technical specifications.
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