The SI8439DB-T1-E1 is a P-channel TrenchFET MOSFET from Vishay, featuring a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 2.7W. It has a continuous drain current of -9.2A and a drain to source resistance of 25mR. The device is packaged in a BGA package and is suitable for surface mount applications. It is RoHS compliant and not radiation hardened.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8439DB-T1-E1 technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | -9.2A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | -800mV |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 330ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8439DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8439DB-T1-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.